Erbium doping to P-based III-V semiconductors by OMVPE with TBP as a non-toxic P source

Erbium (Er) doping to P-based III-V semiconductors, i.e., InP and GaP, by organometallic vapour phase epitaxy (OMVPE) with TBP (tertiarybutylphosphine) as a non-toxic P source has been investigated systematically. Well-controlled Er-doped layers were obtained by using the new source. Secondary ion mass spectroscopy (SIMS) measurement revealed a flat Er profile along the growth direction. It also confirmed good controllability of Er concentration in the layer with the change of the Er source temperature and the hydrogen flow rate through the source. The Er concentration as high as similar to 10(19) cm(-3) was realized together with a specular surface. In photoluminescence (PL) measurements at 4.2 K, Er-related emission was successfully observed at around 1.54 mu m in all the Er-doped layers. The PL spectrum depended strongly on both of Er concentration in the layers and the growth temperature. Such dependence of the PL spectrum was also observed in the Er-doped Gap layers.