EVIDENCE OF DONOR-ACCEPTOR PAIR RECOMBINATION FROM A NEW EMISSION BAND IN SEMICONDUCTING DIAMOND

被引:27
作者
FREITAS, JA
KLEIN, PB
COLLINS, AT
机构
[1] USN,RES LAB,WASHINGTON,DC 20375
[2] UNIV LONDON KINGS COLL,DEPT PHYS,LONDON WC2R 2LS,ENGLAND
关键词
D O I
10.1063/1.111710
中图分类号
O59 [应用物理学];
学科分类号
摘要
Steady state and time resolved photoluminescence studies of type IIb boron-doped synthetic diamond reveal a new broad red emission band that exhibits many of the features of classic donor-acceptor pair recombination. This recombination is thought to be between an as-yet unidentified neutral donor, possibly nitrogen related, approximately 3.6 eV below the conduction band edge and neutral boron acceptors at 0.37 eV above the valence band edge.
引用
收藏
页码:2136 / 2138
页数:3
相关论文
共 15 条
[1]   THE CHARACTERIZATION OF POINT-DEFECTS IN DIAMOND BY LUMINESCENCE SPECTROSCOPY [J].
COLLINS, AT .
DIAMOND AND RELATED MATERIALS, 1992, 1 (5-6) :457-469
[2]  
Collins AT, 1979, PROPERTIES DIAMOND, P79
[3]   SOME PROPERTIES OF VISIBLE LUMINESCENCE EXCITED IN DIAMOND BY IRRADIATION IN FUNDAMENTAL ABSORPTION EDGE [J].
DEAN, PJ ;
MALE, JC .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1964, 25 (12) :1369-&
[4]  
DEAN PJ, 1965, PHYS REV A, V139, P588
[5]   PHOTOLUMINESCENCE AND CATHODOLUMINESCENCE STUDIES OF SEMICONDUCTING DIAMOND [J].
FREITAS, JA ;
STROM, U ;
COLLINS, AT .
DIAMOND AND RELATED MATERIALS, 1993, 2 (2-4) :87-91
[6]  
FREITAS JA, 1992, 16TH P INT C DEF SEM, P1195
[7]   PAIR SPECTRA IN GAP [J].
HOPFIELD, JJ ;
GERSHENZON ;
THOMAS, DG .
PHYSICAL REVIEW LETTERS, 1963, 10 (05) :162-&
[8]  
KANDA H, 1988, 2ND M DIAM TOK
[9]   CATHODOLUMINESCENCE AND ELECTROLUMINESCENCE OF UNDOPED AND BORON-DOPED DIAMOND FORMED BY PLASMA CHEMICAL VAPOR-DEPOSITION [J].
KAWARADA, H ;
YOKOTA, Y ;
MORI, Y ;
NISHIMURA, K ;
HIRAKI, A .
JOURNAL OF APPLIED PHYSICS, 1990, 67 (02) :983-989
[10]  
LAWSON SC, 1991, 2ND P INT C NEW DIAM, P709