ELECTRICAL AND OPTICAL CHARACTERIZATION OF SIC

被引：270
作者：
PENSL, G [1 ]
CHOYKE, WJ [1 ]
机构：
[1] UNIV PITTSBURGH, DEPT PHYS & ASTRON, PITTSBURGH, PA 15260 USA
来源：
PHYSICA B-CONDENSED MATTER | 1993年 / 185卷 / 1-4期
关键词：
D O I：
10.1016/0921-4526(93)90249-6
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We review the current use of electrical and optical methods to study the semiconducting properties of SiC. More specifically we treat Hall measurements, deep-level transient spectroscopy, infrared absorption and luminescence. Some very recent results, not yet available in the literature, on donor and acceptor levels in 3C-SiC, 4H-SiC and 6H-SiC are discussed.
引用
收藏
页码：264 / 283
页数：20
相关论文
共 72 条
[1]   PHOTOLUMINESCENCE OF ALPHA-SIC [J].
ADDAMIANO, A ;
POTTER, RM ;
OZAROW, V .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (06) :517-520
[2]  
AIVAZOVA LS, 1977, SOV PHYS SEMICOND+, V11, P1069
[3]  
ALEKSEENKO MV, 1987, SOV PHYS SEMICOND+, V21, P494
[4]  
ANIKIN MM, 1985, SOV PHYS SEMICOND+, V19, P69
[5]  
BALLANDOVICH VS, 1987, CRYST LATT DEF AMORP, V13, P189
[6]  
BALLANDOVICH VS, 1981, SOV PHYS SEMICOND+, V15, P283
[7]  
BOGDANOV SV, 1988, FIZ TEKH POLUPROV, V22, P728
[8]  
BUSCH G, 1946, HELV PHYS ACTA, V19, P463
[9]  
CARLOS WE, 1987, MATER RES SOC S P, V97, P253
[10]  
Choyke W. J., 1977, International Conference on Radiation Effects in Semiconductors, P58
12345678