DIRECT MODULATION OF DOUBLE-HETEROSTRUCTURE LASERS AT RATES UP TO 1 GBIT-S

被引：39

作者：

CHOWN, M ^{[1
]}

GOODWIN, AR ^{[1
]}

LOVELACE, DF ^{[1
]}

THOMPSON, GH ^{[1
]}

SELWAY, PR ^{[1
]}

机构：

[1] STANDARD TELECOMMUN LABS LTD,HARLOW,ESSEX,ENGLAND

来源：

ELECTRONICS LETTERS | 1973年 / 9卷 / 02期

关键词：

D O I：

10.1049/el:19730024

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：34 / 36

页数：3

共 8 条

[1]

ADAMS MJ, 1969, GALLIUM ARSENIDE LAS, P5

[2] MEASUREMENT AND INTERPRETATION OF LONG SPONTANEOUS LIFETIMES IN DOUBLE HETEROSTRUCTURE LASERS [J].

DYMENT, JC ;

LEE, TP ;

RIPPER, JE .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (02) :452-+

[3] GAAS-ALXGA1-XAS DOUBLE HETEROSTRUCTURE INJECTION LASERS [J].

HAYASHI, I ;

PANISH, MB ;

REINHART, FK .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (05) :1929-&

[4] HIGHLY UNIFORM ALXGA1-XAS DOUBLE-HETEROSTRUCTURE LASERS AND THEIR CHARACTERISTICS AT ROOM TEMPERATURE [J].

MILLER, BI ;

PINKAS, E ;

HAYASHI, I ;

FOY, PW ;

CAPIK, R .

APPLIED PHYSICS LETTERS, 1971, 19 (09) :340-&

[5] DIRECT MODULATION OF SEMICONDUCTOR LASERS [J].

PAOLI, TL ;

RIPPER, JE .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1970, 58 (10) :1457-+

[6]

RAINES JA, 1971, SERL TECH J, V21

[7] PROPERTIES OF DOUBLE HETEROSTRUCTURE LASERS WITH VERY NARROW ACTIVE REGIONS [J].

SELWAY, PR ;

GOODWIN, AR .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1972, 5 (05) :904-+

[8]

TSUKADA T, 1972, APPL PHYS LETT, V20, P334

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