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GAS-SENSITIVE JUNCTION CHARACTERISTICS OF POLY(3-ALKYLTHIOPHENE) SCHOTTKY DIODES
被引：25
作者：
OHMORI, Y
TAKAHASHI, H
KAWAI, T
YOSHINO, K
机构：
[1] Osaka University, Suita, Osaka
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS
|
1990年
/
29卷
/
10期
关键词：
Conducting polymers;
Gas sensor;
Poly(3-alkylthiophene);
Polymer diode;
Schottky diode;
D O I：
10.1143/JJAP.29.L1849
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Novel gas-sensitive junction characteristics have been observed in poly(3-alkylthiophene) Schottky diodes. It has been found that there are two types of gases. One type of gas suppressed the reverse bias current in the Schottky diodes and the other enhanced the reverse bias current. These results have been explained in terms of a gas-dependent band scheme, where they were also confirmed by the capacitance-voltage measurements. © 1990 IOP Publishing Ltd.
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页码：L1849 / L1852
页数：4
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