首页
学术期刊
论文检测
AIGC检测
热点
更多
数据
A NEW METHOD FOR THE DETERMINATION OF THE SPATIAL-DISTRIBUTION OF HOT CARRIER DAMAGE
被引:3
作者
:
MAHNKOPF, R
论文数:
0
引用数:
0
h-index:
0
MAHNKOPF, R
PRZYREMBEL, G
论文数:
0
引用数:
0
h-index:
0
PRZYREMBEL, G
WAGEMANN, HG
论文数:
0
引用数:
0
h-index:
0
WAGEMANN, HG
机构
:
来源
:
JOURNAL DE PHYSIQUE
|
1988年
/ 49卷
/ C-4期
关键词
:
D O I
:
10.1051/jphyscol:19884162
中图分类号
:
学科分类号
:
摘要
:
引用
收藏
页码:775 / 778
页数:4
相关论文
共 5 条
[1]
DETERMINATION OF SPATIAL SURFACE-STATE DENSITY DISTRIBUTION IN MOS AND SIMOS TRANSISTORS AFTER CHANNEL HOT-ELECTRON INJECTION
[J].
MAES, HE
论文数:
0
引用数:
0
h-index:
0
MAES, HE
;
GROESENEKEN, G
论文数:
0
引用数:
0
h-index:
0
GROESENEKEN, G
.
ELECTRONICS LETTERS,
1982,
18
(09)
:372
-374
[2]
Poorter T., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P100
[3]
INTERFACE STATES IN MOSFETS DUE TO HOT-ELECTRON INJECTION DETERMINED BY THE CHARGE PUMPING TECHNIQUE
[J].
SCHMITT, D
论文数:
0
引用数:
0
h-index:
0
SCHMITT, D
;
DORDA, G
论文数:
0
引用数:
0
h-index:
0
DORDA, G
.
ELECTRONICS LETTERS,
1981,
17
(20)
:761
-762
[4]
THE RELATIONSHIP BETWEEN OXIDE CHARGE AND DEVICE DEGRADATION - A COMPARATIVE-STUDY OF NORMAL-CHANNEL AND PARA-CHANNEL MOSFETS
[J].
SCHWERIN, A
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV INNSBRUCK, INST EXPTL PHYS, A-6020 INNSBRUCK, AUSTRIA
SCHWERIN, A
;
HANSCH, W
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV INNSBRUCK, INST EXPTL PHYS, A-6020 INNSBRUCK, AUSTRIA
HANSCH, W
;
WEBER, W
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV INNSBRUCK, INST EXPTL PHYS, A-6020 INNSBRUCK, AUSTRIA
WEBER, W
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1987,
34
(12)
:2493
-2500
[5]
ROLE OF HOT-HOLE INJECTION IN HOT-CARRIER EFFECTS AND THE SMALL DEGRADED CHANNEL REGION IN MOSFETS
[J].
TAKEDA, E
论文数:
0
引用数:
0
h-index:
0
机构:
HITACHI MICROCOMP ENGN LTD,KODAIRA,TOKYO 187,JAPAN
HITACHI MICROCOMP ENGN LTD,KODAIRA,TOKYO 187,JAPAN
TAKEDA, E
;
SHIMIZU, A
论文数:
0
引用数:
0
h-index:
0
机构:
HITACHI MICROCOMP ENGN LTD,KODAIRA,TOKYO 187,JAPAN
HITACHI MICROCOMP ENGN LTD,KODAIRA,TOKYO 187,JAPAN
SHIMIZU, A
;
HAGIWARA, T
论文数:
0
引用数:
0
h-index:
0
机构:
HITACHI MICROCOMP ENGN LTD,KODAIRA,TOKYO 187,JAPAN
HITACHI MICROCOMP ENGN LTD,KODAIRA,TOKYO 187,JAPAN
HAGIWARA, T
.
IEEE ELECTRON DEVICE LETTERS,
1983,
4
(09)
:329
-331
←
1
→
共 5 条
[1]
DETERMINATION OF SPATIAL SURFACE-STATE DENSITY DISTRIBUTION IN MOS AND SIMOS TRANSISTORS AFTER CHANNEL HOT-ELECTRON INJECTION
[J].
MAES, HE
论文数:
0
引用数:
0
h-index:
0
MAES, HE
;
GROESENEKEN, G
论文数:
0
引用数:
0
h-index:
0
GROESENEKEN, G
.
ELECTRONICS LETTERS,
1982,
18
(09)
:372
-374
[2]
Poorter T., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P100
[3]
INTERFACE STATES IN MOSFETS DUE TO HOT-ELECTRON INJECTION DETERMINED BY THE CHARGE PUMPING TECHNIQUE
[J].
SCHMITT, D
论文数:
0
引用数:
0
h-index:
0
SCHMITT, D
;
DORDA, G
论文数:
0
引用数:
0
h-index:
0
DORDA, G
.
ELECTRONICS LETTERS,
1981,
17
(20)
:761
-762
[4]
THE RELATIONSHIP BETWEEN OXIDE CHARGE AND DEVICE DEGRADATION - A COMPARATIVE-STUDY OF NORMAL-CHANNEL AND PARA-CHANNEL MOSFETS
[J].
SCHWERIN, A
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV INNSBRUCK, INST EXPTL PHYS, A-6020 INNSBRUCK, AUSTRIA
SCHWERIN, A
;
HANSCH, W
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV INNSBRUCK, INST EXPTL PHYS, A-6020 INNSBRUCK, AUSTRIA
HANSCH, W
;
WEBER, W
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV INNSBRUCK, INST EXPTL PHYS, A-6020 INNSBRUCK, AUSTRIA
WEBER, W
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1987,
34
(12)
:2493
-2500
[5]
ROLE OF HOT-HOLE INJECTION IN HOT-CARRIER EFFECTS AND THE SMALL DEGRADED CHANNEL REGION IN MOSFETS
[J].
TAKEDA, E
论文数:
0
引用数:
0
h-index:
0
机构:
HITACHI MICROCOMP ENGN LTD,KODAIRA,TOKYO 187,JAPAN
HITACHI MICROCOMP ENGN LTD,KODAIRA,TOKYO 187,JAPAN
TAKEDA, E
;
SHIMIZU, A
论文数:
0
引用数:
0
h-index:
0
机构:
HITACHI MICROCOMP ENGN LTD,KODAIRA,TOKYO 187,JAPAN
HITACHI MICROCOMP ENGN LTD,KODAIRA,TOKYO 187,JAPAN
SHIMIZU, A
;
HAGIWARA, T
论文数:
0
引用数:
0
h-index:
0
机构:
HITACHI MICROCOMP ENGN LTD,KODAIRA,TOKYO 187,JAPAN
HITACHI MICROCOMP ENGN LTD,KODAIRA,TOKYO 187,JAPAN
HAGIWARA, T
.
IEEE ELECTRON DEVICE LETTERS,
1983,
4
(09)
:329
-331
←
1
→