A NEW METHOD FOR THE DETERMINATION OF THE SPATIAL-DISTRIBUTION OF HOT CARRIER DAMAGE

被引:3
作者
MAHNKOPF, R
PRZYREMBEL, G
WAGEMANN, HG
机构
来源
JOURNAL DE PHYSIQUE | 1988年 / 49卷 / C-4期
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D O I
10.1051/jphyscol:19884162
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页码:775 / 778
页数:4
相关论文
共 5 条
[1]   DETERMINATION OF SPATIAL SURFACE-STATE DENSITY DISTRIBUTION IN MOS AND SIMOS TRANSISTORS AFTER CHANNEL HOT-ELECTRON INJECTION [J].
MAES, HE ;
GROESENEKEN, G .
ELECTRONICS LETTERS, 1982, 18 (09) :372-374
[2]  
Poorter T., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P100
[3]   INTERFACE STATES IN MOSFETS DUE TO HOT-ELECTRON INJECTION DETERMINED BY THE CHARGE PUMPING TECHNIQUE [J].
SCHMITT, D ;
DORDA, G .
ELECTRONICS LETTERS, 1981, 17 (20) :761-762
[4]   THE RELATIONSHIP BETWEEN OXIDE CHARGE AND DEVICE DEGRADATION - A COMPARATIVE-STUDY OF NORMAL-CHANNEL AND PARA-CHANNEL MOSFETS [J].
SCHWERIN, A ;
HANSCH, W ;
WEBER, W .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (12) :2493-2500
[5]   ROLE OF HOT-HOLE INJECTION IN HOT-CARRIER EFFECTS AND THE SMALL DEGRADED CHANNEL REGION IN MOSFETS [J].
TAKEDA, E ;
SHIMIZU, A ;
HAGIWARA, T .
IEEE ELECTRON DEVICE LETTERS, 1983, 4 (09) :329-331