PRECURSOR MOLECULAR-OXYGEN STATE IN THE INITIAL CATALYTIC-OXIDATION OF THE INP(110) SURFACE MODIFIED BY ALKALI-METALS

被引：40
作者：
SOUKIASSIAN, P
BAKSHI, MH
STARNBERG, HI
BOMMANNAVAR, AS
HURYCH, Z
机构：
[1] NO ILLINOIS UNIV,DEPT PHYS,DE KALB,IL 60115
[2] UNIV WISCONSIN,CTR SYNCHROTRON RADIAT,STOUGHTON,WI 53589
来源：
PHYSICAL REVIEW B | 1988年 / 37卷 / 11期
关键词：
D O I：
10.1103/PhysRevB.37.6496
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：6496 / 6499
页数：4
相关论文
共 21 条
[1]  
BAKSHI MS, UNPUB
[2]  
BERONIT CM, UNPUB
[3]   FERMI LEVEL PINNING DURING OXIDATION OF ATOMICALLY CLEAN N-INP(110) [J].
BERTNESS, KA ;
KENDELEWICZ, T ;
LIST, RS ;
WILLIAMS, MD ;
LINDAU, I ;
SPICER, WE .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03) :1424-1426
[4]   LOW-ELECTRONEGATIVITY OVERLAYERS AND ENHANCED SEMICONDUCTOR OXIDATION - SM ON SI(111) AND GAAS(110) SURFACES [J].
CHANG, S ;
PHILIP, P ;
WALL, A ;
RAISANEN, A ;
TROULLIER, N ;
FRANCIOSI, A .
PHYSICAL REVIEW B, 1987, 35 (06) :3013-3016
[5]  
CHANG SJ, UNPUB
[6]  
DERRIEN J, 1983, SURF SCI LETT, V124, pL235
[7]  
DERRIEN J, 1976, THESIS U AIX MARSEIL
[8]   MICROSCOPIC CONTROL OF SEMICONDUCTOR SURFACE OXIDATION [J].
FRANCIOSI, A ;
CHANG, S ;
PHILIP, P ;
CAPRILE, C ;
JOYCE, J .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (03) :933-937
[9]   ENHANCEMENT OF SI OXIDATION BY CERIUM OVERLAYERS AND FORMATION OF CERIUM SILICATE [J].
HILLEBRECHT, FU ;
RONAY, M ;
RIEGER, D ;
HIMPSEL, FJ .
PHYSICAL REVIEW B, 1986, 34 (08) :5377-5380
[10]   METASTABLE MOLECULAR PRECURSOR FOR THE DISSOCIATIVE ADSORPTION OF OXYGEN ON SI(111) [J].
HOFER, U ;
MORGEN, P ;
WURTH, W ;
UMBACH, E .
PHYSICAL REVIEW LETTERS, 1985, 55 (27) :2979-2982
123