USE OF TERTIARY-BUTYLPHOSPHINE FOR THE GROWTH OF INP AND GAAS1-XPX

被引:61
作者
CHEN, CH
CAO, DS
STRINGFELLOW, GB
机构
关键词
D O I
10.1007/BF02652236
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:67 / 73
页数:7
相关论文
共 27 条
[2]  
BAN VS, 1973, J PHYS CHEM SOLIDS, V34, P1119
[3]  
BENDAARS SP, 1986, J CRYST GROWTH, V77, P188
[4]  
BUNCHAN NI, 1987, 29TH EL MAT C SANT B
[5]   GROWTH OF ULTRAPURE INP BY ATMOSPHERIC-PRESSURE ORGANOMETALLIC VAPOR-PHASE EPITAXY [J].
CHEN, CH ;
KITAMURA, M ;
COHEN, RM ;
STRINGFELLOW, GB .
APPLIED PHYSICS LETTERS, 1986, 49 (15) :963-965
[6]   MOVPE GROWTH OF INP USING ISOBUTYLPHOSPHINE AND TERT-BUTYLPHOSPHINE [J].
CHEN, CH ;
LARSEN, CA ;
STRINGFELLOW, GB ;
BROWN, DW ;
ROBERTSON, AJ .
JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) :11-18
[7]  
CHEN CH, 1986, I PHYS C SERIES, V83, pP75
[8]   HIGH-PURITY GAAS PREPARED FROM TRIMETHYLGALLIUM AND ARSINE [J].
DAPKUS, PD ;
MANASEVIT, HM ;
HESS, KL ;
LOW, TS ;
STILLMAN, GE .
JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) :10-23
[9]   OMVPE GROWTH OF INP AND GA0.47IN0.53AS USING ETHYLDIMETHYLINDIUM [J].
FRY, KL ;
KUO, CP ;
LARSEN, CA ;
COHEN, RM ;
STRINGFELLOW, GB ;
MELAS, A .
JOURNAL OF ELECTRONIC MATERIALS, 1986, 15 (02) :91-96
[10]   INASSBP-INAS SUPER-LATTICE GROWN BY ORGANOMETALLIC VPE METHOD [J].
FUKUI, T ;
HORIKOSHI, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (09) :L551-L554