NONDESTRUCTIVE THICKNESS MEASUREMENT OF THIN FILMS ON MICROSTRUCTURES

被引：12

作者：

FRANZ, I

LANGHEIN.W

机构：

来源：

SOLID-STATE ELECTRONICS | 1968年 / 11卷 / 11期

关键词：

D O I：

10.1016/0038-1101(68)90120-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：987 / &

共 13 条

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[4] THICKNESS MEASUREMENT OF SILICON DIOXIDE LAYERS BY ULTRAVIOLET-VISIBLE INTERFERENCE METHOD [J].

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[5]

CORL EA, 1964, SOLIDST ELECTRON, V7, P116

[6] A SIMPLE NON-DESTRUCTIVE METHOD OF MEASURING THICKNESS OF TRANSPARENT THIN FILMS BETWEEN 10 AND 600 NM [J].

FRANZ, I ;

LANGHEINRICH, W .

SOLID-STATE ELECTRONICS, 1968, 11 (01) :59-+

[7]

FRANZ I, 1964, TELEFUNKENZEITUNG, V37, P194

[8] ANOTHER METHOD FOR DETERMINATION OF SILICON OXIDE THICKNESS [J].

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SCHMIDT, E .

SOLID-STATE ELECTRONICS, 1967, 10 (03) :264-&

[9]

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[10]

MCGALLUM JD, 1967, SCP SST, P43

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