HIGH-FIELD DISTRIBUTION FUNCTION IN GAAS

[1] MAXIMUM ANISOTROPY APPROXIMATION FOR CALCULATING ELECTRON DISTRIBUTIONS - APPLICATION TO HIGH FIELD TRANSPORT IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1964, 133 (1A): : A26 - A33

[2] INTERVALLEY TRANSFER MECHANISM OF NEGATIVE RESISTIVITY IN BULK SEMICONDUCTORS [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1965, 86 (554P): : 1205 - &

[3] FIELD DEPENDENCE OF MOBILITY IN (100) CONDUCTION BAND MINIMA OF GAAS [J]. PHYSICS LETTERS, 1966, 21 (04): : 368 - +

[4] HIGH-FIELD DISTRIBUTION FUNCTION IN GAAS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) : 22 - +

[5] GUNN JM, TO BE PUBLISHED

[6] HIGH-FIELD ELECTRON DISTRIBUTION IN GAAS [J]. PHYSICS LETTERS, 1966, 21 (06): : 612 - &

[1] MAXIMUM ANISOTROPY APPROXIMATION FOR CALCULATING ELECTRON DISTRIBUTIONS - APPLICATION TO HIGH FIELD TRANSPORT IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1964, 133 (1A): : A26 - A33

[2] INTERVALLEY TRANSFER MECHANISM OF NEGATIVE RESISTIVITY IN BULK SEMICONDUCTORS [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1965, 86 (554P): : 1205 - &

[3] FIELD DEPENDENCE OF MOBILITY IN (100) CONDUCTION BAND MINIMA OF GAAS [J]. PHYSICS LETTERS, 1966, 21 (04): : 368 - +

[4] HIGH-FIELD DISTRIBUTION FUNCTION IN GAAS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) : 22 - +

[5] GUNN JM, TO BE PUBLISHED

[6] HIGH-FIELD ELECTRON DISTRIBUTION IN GAAS [J]. PHYSICS LETTERS, 1966, 21 (06): : 612 - &