ELECTRON-MOBILITY IN N-CHANNEL DEPLETION-TYPE MOS-TRANSISTORS

被引：13

作者：

OHNO, Y

OKUTO, Y

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1982年 / 29卷 / 02期

关键词：

D O I：

10.1109/T-ED.1982.20682

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：190 / 194

页数：5

共 11 条

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[7] COMPUTER-AIDED SI-MOSFET PROCESS DESIGNING [J].

OHNO, Y ;

OKUTO, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 :65-69

[8] LARGE-SIGNAL ANALYSIS OF A SILICON READ DIODE OSCILLATOR [J].

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[9] PROPERTIES OF SEMICONDUCTOR SURFACE INVERSION LAYERS IN ELECTRIC QUANTUM LIMIT [J].

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[10]

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