PHOTON-MEDIATED SEQUENTIAL RESONANT-TUNNELING IN INTENSE TERAHERTZ ELECTRIC-FIELDS

被引：157

作者：

GUIMARAES, PSS

KEAY, BJ

KAMINSKI, JP

ALLEN, SJ

HOPKINS, PF

GOSSARD, AC

FLOREZ, LT

HARBISON, JP

机构：

[1] UNIV CALIF SANTA BARBARA,DEPT MAT,SANTA BARBARA,CA 93106

[2] BELLCORE,RED BANK,NJ 07701

来源：

PHYSICAL REVIEW LETTERS | 1993年 / 70卷 / 24期

关键词：

D O I：

10.1103/PhysRevLett.70.3792

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We have measured the current-voltage (I-V) characteristic of semiconductor superlattices in the presence of intense terahertz electric fields produced by free-electron lasers. The nonlinear I-V curves exhibit new structure that we attribute to photon-mediated sequential resonant tunneling. This tunneling process consists of well to well sequential tunneling into photon sidebands induced by the terahertz electric fields.

引用

页码：3792 / 3795

页数：4

共 13 条

[1]

BASS FG, 1986, PHYS REP, V140, P37

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