TURN-OFF-TYPE FIELD-CONTROLLED THYRISTOR - CONCEPTS FOR HIGH-POWER OPERATION

被引：0
|
作者：
HOMOLA, J [1 ]
MILNES, AG [1 ]
机构：
[1] CARNEGIE MELLON UNIV, PITTSBURGH, PA 15213 USA
来源：
SOLID-STATE ELECTRONICS | 1980年 / 23卷 / 11期
关键词：
D O I：
10.1016/0038-1101(80)90019-2
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1101 / 1105
页数：5
相关论文
共 50 条
  • [21] Switching characteristics of an MOSFET-controlled high-power integrated thyristor
    Grekhov, IV
    Yurkov, SN
    Mnatsakanov, TT
    Tandoev, AG
    Kostina, LS
    TECHNICAL PHYSICS, 2006, 51 (05) : 609 - 614
  • [22] HIGH-POWER, TIL-TYPE GATE-ASSISTED TURN-OFF THYRISTORS
    SILARD, A
    TURTUDAU, F
    MARGARIT, M
    INTERNATIONAL JOURNAL OF ELECTRONICS, 1986, 60 (03) : 347 - 359
  • [23] The Integrated Emitter Turn-Off Thyristor (IETO)-An Innovative Thyristor-Based High Power Semiconductor Device Using MOS Assisted Turn-Off
    Bragard, Michael
    Conrad, Marcus
    van Hoek, Hauke
    De Doncker, Rik W.
    IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS, 2011, 47 (05) : 2175 - 2182
  • [24] A study on maximum turn-off current of a high-power GTO
    Shimizu, Y
    Kimura, S
    Kozaka, H
    Matsuura, N
    Tanaka, T
    Monma, N
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1999, 46 (02) : 413 - 419
  • [25] SNUBBER CIRCUIT FOR HIGH-POWER GATE TURN-OFF THYRISTORS
    OHASHI, H
    IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS, 1983, 19 (04) : 655 - 664
  • [26] Static and dynamic characteristics of an MOS-Controlled high-power integrated thyristor
    Grekhov, IV
    Mnatsakanov, TT
    Yurkov, SN
    Tandoev, AG
    Kostina, LS
    TECHNICAL PHYSICS, 2005, 50 (07) : 896 - 903
  • [27] Static and dynamic characteristics of an MOS-controlled high-power integrated thyristor
    I. V. Grekhov
    T. T. Mnatsakanov
    S. N. Yurkov
    A. G. Tandoev
    L. S. Kostina
    Technical Physics, 2005, 50 : 896 - 903
  • [28] Design and Optimization of N-type SiC Gate Turn-off Thyristor with High Turn-off Gain and High Breakdown Voltage
    Ma, Hongming
    Wang, Yan
    2021 INTERNATIONAL CONFERENCE ON IC DESIGN AND TECHNOLOGY (ICICDT), 2021,
  • [29] On the maximum turn-off current in thyristor structures controlled by field-effect-transistor gates
    Lenin All-Russia Electrical, Engineering Inst, Moscow, Russia
    Jinshu Rechuli Xuebao, 4 (118-122):
  • [30] On the maximum turn-off current in thyristor structures controlled by field-effect-transistor gates
    Kuz'min, VA
    Yurkov, SN
    JOURNAL OF COMMUNICATIONS TECHNOLOGY AND ELECTRONICS, 1999, 44 (01) : 113 - 116
12345