Ferromagnetism in Co-doped ZnO films grown by molecular beam epitaxy: magnetic, electrical and microstructural studies

被引：4

作者：

Strelchuk, V. V. ^{[1
]}

Bryksa, V. P. ^{[1
]}

Avramenko, K. A. ^{[1
]}

Lytvyn, P. M. ^{[1
]}

Valakh, M. Ya. ^{[1
]}

Pashchenko, V. O. ^{[2
]}

Bludov, O. M. ^{[2
]}

Deparis, C. ^{[3
]}

Morhain, C. ^{[3
]}

Tronc, P. ^{[4
]}

机构：

[1] Natl Acad Sci Ukraine, V Lashkaryov Inst Semicond Phys, 45 Prospect Nauky, UA-03028 Kiev, Ukraine

[2] Natl Acad Sci Ukraine, B Verkin Inst Low Temp Phys & Engn, UA-61103 Kharkov, Ukraine

[3] CNRS, Ctr Rech Heteroepitaxie & Applicat, F-06560 Valbonne, France

[4] Ecole Super Phys & Chim Ind Ville Paris, CNRS, F-75005 Paris, France

来源：

SEMICONDUCTOR PHYSICS QUANTUM ELECTRONICS & OPTOELECTRONICS | 2011年 / 14卷 / 01期

关键词：

DMS; ferromagnetism; RKKY; plasmon damping;

D O I：

10.15407/spqeo14.01.031

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We studied structural, optical and magnetic properties of high-quality 5 and 15% Co-doped ZnO films grown by plasma-assisted molecular beam epitaxy (MBE) on (0001)-sapphire substrates. Magnetic force microscopy (MFM) and magnetic measurements with a SQUID magnetometer show clear ferromagnetic behavior of the films up to room temperature, while they are antiferromagnetic below approximately 200 K. Temperature dependences of the carrier mobility were determined using Raman line shape analysis of the longitudinal optical phonon-plasmon coupled modes. It has been show that the microscopic mechanism for ferromagnetic ordering is coupling mediated by free electron spins of Co atoms. These results bring insight into a subtle interplay between charge carriers and magnetism in MBE-grown Zn1-x,CoxO films.

引用

页码：31 / 40

页数：10

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