HIGH-RESOLUTION CONVERSION ELECTRON-SPECTROSCOPY OF VALENCE ELECTRON CONFIGURATIONS

被引:6
|
作者
PETERSEN, JW
WEYER, G
HOLZSCHUH, E
KUNDIG, W
机构
[1] UNIV ZURICH,INST PHYS,CH-8001 ZURICH,SWITZERLAND
[2] CERN,CH-1211 GENEVA 23,SWITZERLAND
关键词
D O I
10.1016/0375-9601(90)90170-S
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Measurements of conversion electrons from the outermost valence shells of ion implanted, dilute impurity probe atoms in solids are reported. The measured spectra are directly related to the local density and angular momentum character of the occupied electron states at the probe atom. Thus the valence electron configuration of implanted probe atoms in solids has been investigated. First results for the probes Sn and Ge in Si, Ge, GaAs, Pd, and β-Sn are compared to theoretical calculations. © 1990.
引用
收藏
页码:226 / 230
页数:5
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