ELECTRON-CAPTURE (INTERNAL) LUMINESCENCE FROM OXYGEN DONOR IN GALLIUM PHOSPHIDE

被引:111
作者
DEAN, PJ
HENRY, CH
机构
来源
PHYSICAL REVIEW | 1968年 / 176卷 / 03期
关键词
D O I
10.1103/PhysRev.176.928
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:928 / &
相关论文
共 44 条
[1]  
AGGARWAL RL, 1965, PHYS REV, V140, P1246
[2]   EFFECT OF UNIAXIAL STRESS ON EXICTATION SPECTRA OF DONORS IN SILICON [J].
AGGARWAL, RL ;
RAMDAS, AK .
PHYSICAL REVIEW, 1965, 137 (2A) :A602-&
[3]  
BALSLEV I, 1966, J PHYS SOC JPN, VS 21, P101
[4]   OPTICAL ABSORPTION SPECTRA OF ARSENIC AND PHOSPHORUS IN SILICON [J].
BICHARD, JW ;
GILES, JC .
CANADIAN JOURNAL OF PHYSICS, 1962, 40 (10) :1480-&
[5]   ABSORPTION AND LUMINESCENCE OF EXCITONS AT NEUTRAL DONORS IN GALLIUM PHOSPHIDE [J].
DEAN, PJ .
PHYSICAL REVIEW, 1967, 157 (03) :655-&
[6]   INFRARED DONOR-ACCEPTOR PAIR SPECTRA INVOLVING DEEP OXYGEN DONOR IN GALLIUM PHOSPHIDE [J].
DEAN, PJ ;
HENRY, CH ;
FROSCH, CJ .
PHYSICAL REVIEW, 1968, 168 (03) :812-&
[7]   2-ELECTRON TRANSITIONS IN LUMINESCENCE OF EXCITONS BOUND TO NEUTRAL DONORS IN GALLIUM PHOSPHIDE [J].
DEAN, PJ ;
CUTHBERT, JD ;
THOMAS, DG ;
LYNCH, RT .
PHYSICAL REVIEW LETTERS, 1967, 18 (04) :122-&
[8]   OPTICAL PROPERTIES OF GROUP 4 ELEMENTS CARBON AND SILICON IN GALLIUM PHOSPHIDE [J].
DEAN, PJ ;
FROSCH, CJ ;
HENRY, CH .
JOURNAL OF APPLIED PHYSICS, 1968, 39 (12) :5631-&
[9]  
FAULKNER R, PERSONAL COMMUNICATI
[10]   TOWARD A THEORY OF ISOELECTRONIC IMPURITIES IN SEMICONDUCTORS [J].
FAULKNER, RA .
PHYSICAL REVIEW, 1968, 175 (03) :991-&