PREPARATION OF HIGHLY PHOTOCONDUCTIVE AMORPHOUS SILICON BY RF SPUTTERING

被引：118

作者：

MOUSTAKAS, TD ^{[1
]}

ANDERSON, DA ^{[1
]}

PAUL, W ^{[1
]}

机构：

[1] HARVARD UNIV,DIV APPL SCI,CAMBRIDGE,MA 02138

来源：

SOLID STATE COMMUNICATIONS | 1977年 / 23卷 / 03期

关键词：

D O I：

10.1016/0038-1098(77)90099-0

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：155 / 158

页数：4

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[9] DOPING, SCHOTTKY-BARRIER AND P-N-JUNCTION FORMATION IN AMORPHOUS-GERMANIUM AND SILICON BY RF SPUTTERING [J].

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