PHOTOLUMINESCENCE EXCITATION INTERPRETED BY PHOTON RECYCLING IN GAAS/GAALAS MULTIPLE-QUANTUM-WELL STRUCTURE

被引：4

作者：

GOLDYS, EM ^{[1
]}

CHIN, VWL ^{[1
]}

TANSLEY, TL ^{[1
]}

VAUGHAN, MR ^{[1
]}

机构：

[1] CSIRO,DIV RADIOPHYS,EPPING,NSW 2121,AUSTRALIA

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 75卷 / 08期

关键词：

D O I：

10.1063/1.356004

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The photoluminescence spectra of GaAs/GaAlAs multiple quantum wells on GaAs buffer show a band related to confined quantum-well states as well as the emission from electron-hole recombination in the buried GaAs layer. The power dependence of the GaAs emission intensity indicates that the nonequilibrium minority-carrier concentration m GaAs is large due to substantial photon recycling. The principal features of the photoluminescence excitation data are discussed in the context of the photon recycling mechanism and a quantitative calculation Of the photoluminescence excitation spectrum is presented.

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页码：4194 / 4200

页数：7

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