NUMERICAL-ANALYSIS OF DEPOSITION RATES OF ZIRCONIUM THIN-FILMS BY THERMAL CHEMICAL VAPOR-DEPOSITION

被引：0

作者：

NAKAMURA, S

HAYASHI, Y

KAWANISHI, T

KOMATSU, T

TAKEUCHI, M

机构：

[1] KANAZAWA UNIV,FAC ENGN,DEPT CHEM & CHEM ENGN,KANAZAWA,ISHIKAWA 920,JAPAN

[2] KAO CORP,WAKAYAMA 640,JAPAN

来源：

NIPPON SERAMIKKUSU KYOKAI GAKUJUTSU RONBUNSHI-JOURNAL OF THE CERAMIC SOCIETY OF JAPAN | 1992年 / 100卷 / 03期

关键词：

CHEMICAL VAPOR DEPOSITION; ZIRCONIUM; NUMERICAL ANALYSIS; ULTRAFINE PARTICLE; ZIRCONIUM TETRA-I-PROPOXIDE;

D O I：

暂无

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Zirconia films were prepared by the CVD method using thermal decomposition of zirconium-tetra-i-propoxide with He gas under 20 kPa. The films on the substrate consisted of fine particles less than 1-mu-m and were metastable tetragonal-zirconia. The maximum deposition rate was 6 nm/s at 673 K and a reactant gas concentration of 0.05 mol%. The profile of deposition rate was calculated using a simplified reaction and coagulation model. The calculated results showed a good agreement with the experimental data under the operating conditions of 673 K and 0.07 mol%. Deposition rates for the system used are estimated with this model.

引用

页码：266 / 271

页数：6

共 5 条

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[2]

ISENBARG AO, 1977, ELECTRODE MAT P ENER, V17, P572

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