ATOMIC LAYER EPITAXY OF GAAS AND ALGAAS

被引：0

作者：

BEDAIR, SM

REID, KG

HUSSIEN, SA

COLTER, PC

DIP, A

URDIANYK, HM

ERDOGAN, MV

机构：

来源：

INSTITUTE OF PHYSICS CONFERENCE SERIES | 1990年 / 112期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Atomic Layer Epitaxy of GaAs and AlGaAs has been demonstrated over the growth temperature range 500-700-degrees-C. The background carbon concentration in the ALE films was found to depend critically on the growth temperature. ALE at high growth temperatures can only be successful with short exposure time to column III flux. These results are explained based on the role of gaseous thermal boundary layer and the premature cracking of the organometallic molecules in the gas phase.

引用

页码：143 / 148

页数：6

共 7 条

[1]

BEDAIR SM, 1990, ACTA POLYTECH SCAND, V195, P17

[2]

COLTER P, UNPUB

[3] ATOMIC LAYER EPITAXY OF ALGAAS [J].