DONOR GETTERING IN GAAS BY RARE-EARTH ELEMENTS

被引：38

作者：

RACZYNSKA, J

FRONC, K

LANGER, JM

LEMANSKA, A

STAPOR, A

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 09期

关键词：

D O I：

10.1063/1.99825

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：761 / 763

页数：3

共 23 条

[1]

BAGRAEV NT, 1984, SOV PHYS SEMICOND+, V18, P49

[2] INCORPORATION OF ERBIUM IN GAAS BY LIQUID-PHASE EPITAXY [J].

BANTIEN, F ;

BAUSER, E ;

WEBER, J .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (08) :2803-2806

[3]

GATSOEV KA, 1983, SOV PHYS SEMICOND+, V17, P1373

[4] YTTERBIUM-DOPED INP LIGHT-EMITTING DIODE AT 1.0-MU-M [J].

HAYDL, WH ;

MULLER, HD ;

ENNEN, H ;

KORBER, W ;

BENZ, KW .

APPLIED PHYSICS LETTERS, 1985, 46 (09) :870-872

[5]

Hemstreet L. A., 1986, Materials Science Forum, V10-12, P85, DOI 10.4028/www.scientific.net/MSF.10-12.85

[6]

ILEGEMS M, 1985, TECHNOLOGY PHYSICS M, P83

[7]

KASATKIN VA, 1985, SOV PHYS SEMICOND+, V19, P221

[8] RARE-EARTH IONS IN LPE III-V SEMICONDUCTORS [J].

KORBER, W ;

WEBER, J ;

HANGLEITER, A ;

BENZ, KW ;

ENNEN, H ;

MULLER, HD .

JOURNAL OF CRYSTAL GROWTH, 1986, 79 (1-3) :741-744

[9]

KORBER W, 1988, APPL PHYS LETT, V52, P114, DOI 10.1063/1.99067

[10]

KUNZEL H, 1980, APPL PHYS LETT, V37, P416, DOI 10.1063/1.91927

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