MODELING OF MINORITY-CARRIER TRANSPORT IN HEAVILY DOPED SILICON EMITTERS

被引：110
作者：
DELALAMO, JA [1 ]
SWANSON, RM [1 ]
机构：
[1] STANFORD UNIV, STANFORD, CA 94305 USA
来源：
SOLID-STATE ELECTRONICS | 1987年 / 30卷 / 11期
关键词：
D O I：
10.1016/0038-1101(87)90077-3
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1127 / 1136
页数：10
相关论文
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