EXCITED-STATES OF F-CENTERS IN OXIDES

被引：0

作者：

HENDERSON, B

OCONNELL, DC

机构：

来源：

SEMICONDUCTORS AND INSULATORS | 1978年 / 3卷 / 04期

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D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：299 / 327

页数：29

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