TRANSIENT ANNEALING OF ARSENIC-IMPLANTED SILICON USING A GRAPHITE STRIP HEATER

被引：30
作者：
TSAUR, BY
DONNELLY, JP
FAN, JCC
GEIS, MW
机构：
来源：
APPLIED PHYSICS LETTERS | 1981年 / 39卷 / 01期
关键词：
D O I：
10.1063/1.92529
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：93 / 95
页数：3
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