A GENERAL SIMULATOR FOR VLSI LITHOGRAPHY AND ETCHING PROCESSES .2. APPLICATION TO DEPOSITION AND ETCHING

被引：97
作者：
OLDHAM, WG
NEUREUTHER, AR
SUNG, C
REYNOLDS, JL
NANDGAONKAR, SN
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1980年 / 27卷 / 08期
关键词：
D O I：
10.1109/T-ED.1980.20056
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1455 / 1459
页数：5
相关论文
共 9 条
[1]   OPTIMIZATION OF AL STEP COVERAGE THROUGH COMPUTER-SIMULATION AND SCANNING ELECTRON-MICROSCOPY [J].
BLECH, IA ;
FRASER, DB ;
HASZKO, SE .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (01) :13-19
[2]   EQUILIBRIUM TOPOGRAPHY OF SPUTTERED AMORPHOUS SOLIDS .3. COMPUTER SIMULATION [J].
CATANA, C ;
CARTER, G ;
COLLIGON, JS .
JOURNAL OF MATERIALS SCIENCE, 1972, 7 (04) :467-&
[3]   EVOLUTION OF WELL-DEFINED SURFACE CONTOUR SUBMITTED TO ION-BOMBARDMENT - COMPUTER-SIMULATION AND EXPERIMENTAL INVESTIGATION [J].
DUCOMMUN, JP ;
CANTAGREL, M ;
MOULIN, M .
JOURNAL OF MATERIALS SCIENCE, 1975, 10 (01) :52-62
[4]   REDEPOSITION - SERIOUS PROBLEM IN RF SPUTTER ETCHING OF STRUCTURES WITH MICRONMETER DIMENSIONS [J].
LEHMANN, HW ;
KRAUSBAUER, L ;
WIDMER, R .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (01) :281-284
[5]   MODELING ION MILLING [J].
NEUREUTHER, AR ;
LIU, CY ;
TING, CH .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (06) :1767-1771
[6]   GENERAL SIMULATOR FOR VLSI LITHOGRAPHY AND ETCHING PROCESSES .1. APPLICATION TO PROJECTION LITHOGRAPHY [J].
OLDHAM, WG ;
NANDGAONKAR, SN ;
NEUREUTHER, AR ;
OTOOLE, M .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) :717-722
[7]   SIMULATION OF DRY ETCHED LINE EDGE PROFILES [J].
REYNOLDS, JL ;
NEUREUTHER, AR ;
OLDHAM, WG .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (06) :1772-1775
[8]   STUDY OF PLANARIZED SPUTTER-DEPOSITED SIO2 [J].
TING, CY ;
VIVALDA, VJ ;
SCHAEFER, HG .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (03) :1105-1112
[9]   SIMULATION OF PLASMA-ETCHED LITHOGRAPHIC STRUCTURES [J].
VISWANATHAN, NS .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02) :388-390
1