PROPERTIES OF AMMONIA-FREE NITROGEN-SI3N4 FILMS PRODUCED AT LOW-TEMPERATURES

被引：55

作者：

GERETH, R

SCHERBER, W

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1972年 / 119卷 / 09期

关键词：

D O I：

10.1149/1.2404452

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1248 / &

共 14 条

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[3] PREPARATION AND PROPERTIES OF AMORPHOUS SILICON NITRIDE FILMS [J].

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[6]

GERETH R, 1970, 144 LOS ANG M SOC PA

[7] SILICON NITRIDE FILMS BY REACTIVE SPUTTERING [J].

HU, SM ;

GREGOR, LV .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (08) :826-+

[8] SOME PROPERTIES OF SILICON NITRIDE FILMS PRODUCED BY RADIO FREQUENCY GLOW DISCHARGE REACTION OF SILANE AND NITROGEN [J].

KUWANO, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1969, 8 (07) :876-&

[9] PREPARATION AND PROPERTIES OF SILICON NITRIDE PRODUCED BY A RADIO FREQUENCY GLOW DISCHARGE REACTION OF SILANE AND NITROGEN - PREPARATION AND PROPERTIES OF SILICON NITRIDE [J].

KUWANO, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1968, 7 (01) :88-&

[10] ANALYSIS OF SILICON NITRIDE LAYERS DEPOSITED FROM SIH4 AND N2 ON SILICON [J].

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SCHERBER, W .

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