FABRICATION AND PERFORMANCES OF DELTA-DOPED SI N-MESFET GROWN BY MBE

被引：12

作者：

CHEN, Q ^{[1
]}

WILLANDER, M ^{[1
]}

CARTER, J ^{[1
]}

THAKI, CH ^{[1
]}

EVANS, ERA ^{[1
]}

机构：

[1] UNIV SOUTHAMPTON,DEPT ELECT ENGN & COMP SCI,SOUTHAMPTON SO9 5NH,HANTS,ENGLAND

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 08期

关键词：

FIELD EFFECT TRANSISTORS; TRANSISTORS; SEMICONDUCTOR DEVICES AND MATERIALS;

D O I：

10.1049/el:19930450

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The fabrication of an Sb delta-doped Si n-MESFET grown by molecular-beam epitaxy (MBE) and a low-energy Sb ion source is reported. The FETs have gate lengths of 2 mum and showed a transconductance as high as 28 mS/mm and a gate breakdown voltage of 3.7-4.8 V.

引用

页码：671 / 673

页数：3

共 8 条

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