GAIN AND THRESHOLD CHARACTERISTICS OF STRAIN-COMPENSATED MULTIPLE-QUANTUM-WELL LASERS

Strain-compensated multiple-quantum-well lasers with an operating wavelength near 1.5-mu-m have been grown by low pressure OMVPE. A simple growth method was used to achieve zero net strain structures having InGaAs wells with 1.1% compressive strain and InGaAsP barriers with compensating tension. Broad stripe laser structures with three, six, and nine wells were characterised and the gain coefficient per well is shown to be related to the logarithm of the current density per well. A threshold current density of 451 A . CM-2 was obtained for the structure with three wells, uncoated facets, and a cavity length of 2 mm.