INFLUENCE OF DEFECT PHONON MODES ON HOPPING CONDUCTION .2. NUMERICAL RESULTS

被引:2
作者
AHMED, G
BLACKMAN, JA
机构
来源
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1980年 / 42卷 / 04期
关键词
D O I
10.1080/01418638008227294
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:529 / 550
页数:22
相关论文
共 28 条
[11]   PHONON-ASSISTED HOPPING DUE TO INTERACTION WITH BOTH ACOUSTICAL AND OPTICAL PHONONS [J].
GORHAMBERGERON, E ;
EMIN, D .
PHYSICAL REVIEW B, 1977, 15 (08) :3667-3680
[12]   ELECTRICAL AND STRUCTURAL-PROPERTIES OF AMORPHOUS GERMANIUM [J].
HAUSER, JJ ;
STAUDINGER, A .
PHYSICAL REVIEW B, 1973, 8 (02) :607-615
[13]   ELECTRONIC CONDUCTION IN AMORPHOUS SEMICONDUCTORS [J].
JONSCHER, AK .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1971, 8 (01) :135-&
[14]   HOPPING CONDUCTION IN SEMICONDUCTING DIAMOND [J].
MASSARANI, B ;
BOURGOIN, JC ;
CHRENKO, RM .
PHYSICAL REVIEW B, 1978, 17 (04) :1758-1769
[15]   ELASTIC MODULI OF DIAMOND [J].
MCSKIMIN, HJ ;
BOND, WL .
PHYSICAL REVIEW, 1957, 105 (01) :116-121
[16]   LOCALIZED CONDUCTION PROCESSES IN AMORPHOUS GERMANIUM [J].
MORGAN, M ;
WALLEY, PA .
PHILOSOPHICAL MAGAZINE, 1971, 23 (183) :661-&
[17]  
Mott N. F., 1968, Journal of Non-Crystalline Solids, V1, P1, DOI 10.1016/0022-3093(68)90002-1
[18]   2-PHONON TRANSITIONS IN IMPURITY CONDUCTION IN SEMICONDUCTORS [J].
MYCIELSKI, J .
PHYSICAL REVIEW, 1962, 125 (01) :46-&
[19]   PHONON DISPERSION RELATIONS IN GE AT 80 DEGREES K [J].
NILSSON, G ;
NELIN, G .
PHYSICAL REVIEW B, 1971, 3 (02) :364-&
[20]   EVALUATION OF MOTTS PARAMETERS FOR HOPPING CONDUCTION IN AMORPHOUS GE, SI, AND SE-SI [J].
PAUL, DK ;
MITRA, SS .
PHYSICAL REVIEW LETTERS, 1973, 31 (16) :1000-1003