共 50 条
- [1] IMPURITY PHOTOCONDUCTIVITY OF GALLIUM-ARSENIDE WITH BUILT-IN ELECTRIC-FIELDS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1979, 13 (01): : 56 - 59
- [2] PHOTOCONDUCTIVITY OF SEMIINSULATING CHROMIUM-DOPED GALLIUM-ARSENIDE SUBJECTED TO STRONG ELECTRIC-FIELDS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 6 (06): : 928 - &
- [3] ANALYSIS OF MASS-TRANSFER DURING GALLIUM-ARSENIDE ELECTRIC-LIQUID EPITAXY ZHURNAL TEKHNICHESKOI FIZIKI, 1983, 53 (03): : 538 - 544
- [5] EFFECT OF ELECTRON HEATING BY SURFACE ELECTRIC-FIELDS ON OSCILLATING PHOTORESPONSE SPECTRA OF GALLIUM-ARSENIDE METAL STRUCTURES PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1981, 65 (01): : 259 - 263
- [7] FREQUENCY-DEPENDENCE OF THE SMALL-SIGNAL ELECTRICAL-CONDUCTIVITY OF GALLIUM-ARSENIDE IN STRONG ELECTRIC-FIELDS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1985, 19 (09): : 1047 - 1047
- [9] BEHAVIOR OF A NEMATIC LIQUID-CRYSTAL IN ALTERNATING ELECTRIC-FIELDS KRISTALLOGRAFIYA, 1977, 22 (03): : 660 - 663
- [10] SPONTANEOUS ELECTRIC ABSORPTION IN CADMIUM TELLURIDE AND GALLIUM-ARSENIDE ZHURNAL EKSPERIMENTALNOI I TEORETICHESKOI FIZIKI, 1973, 65 (05): : 2007 - 2015