ULTRAHIGH SPEED INGAASP/INP DFB LASERS EMITTING AT 1.3 MU-M WAVELENGTH

被引：29
作者：
KAMITE, K
SUDO, H
YANO, M
ISHIKAWA, H
IMAI, H
机构：
[1] Fujitsu Lab Ltd, Atsugi, Jpn, Fujitsu Lab Ltd, Atsugi, Jpn
来源：
IEEE JOURNAL OF QUANTUM ELECTRONICS | 1987年 / 23卷 / 06期
关键词：
SEMICONDUCTING INDIUM COMPOUNDS;
D O I：
10.1109/JQE.1987.1073409
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A bandwidth of 13 GHz has been attained in a 1. 3- mu m distributed feedback laser at 25 degree C. A mesa structure was introduced to reduce the parasitic capacitance and the lasing wavelength was detuned from the gain peak to increase the differential gain.
引用
收藏
页码：1054 / 1058
页数：5
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