TRANSPARENT GATE SILICON PHOTODETECTORS

被引：39

作者：

SCHRODER, DK

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1978年 / 25卷 / 02期

关键词：

D O I：

10.1109/T-ED.1978.19044

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：90 / 97

页数：8

共 24 条

[1] TRANSPARENT METAL-OXIDE ELECTRODE CID IMAGER [J].

BROWN, DM ;

GHEZZO, M ;

GARFINKEL, M .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1976, 11 (01) :128-132

[2] QUANTUM EFFICIENCY OF A SILICON GATE CHARGE-COUPLED OPTICAL IMAGING ARRAY [J].

BROWN, RW ;

CHAMBERLAIN, SG .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1973, 20 (02) :675-685

[3] PROPERTIES OF SN-DOPED IN2O3 FILMS PREPARED BY RF SPUTTERING [J].

FAN, JCC ;

BACHNER, FJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (12) :1719-1725

[4] HETEROJUNCTION SOLAR-CELLS OF SNO 2/SI [J].

FRANZ, S ;

KENT, G ;

ANDERSON, RL .

JOURNAL OF ELECTRONIC MATERIALS, 1977, 6 (02) :107-123

[5] HIGHLY CONDUCTIVE, TRANSPARENT FILMS OF SPUTTERED IN2-XSNXO3-Y [J].

FRASER, DB ;

COOK, HD .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (10) :1368-&

[6] SURFACE EFFECTS ON P-N JUNCTIONS - CHARACTERISTICS OF SURFACE SPACE-CHARGE REGIONS UNDER NON-EQUILIBRIUM CONDITIONS [J].

GROVE, AS ;

FITZGERALD, DJ .

SOLID-STATE ELECTRONICS, 1966, 9 (08) :783-+

[7]

HAACKE G, 1976, APPL PHYS LETT, V28, P622, DOI 10.1063/1.88589

[8]

Heavens O. S., 1955, OPTICAL PROPERTIES T

[9] OPTICAL-CONSTANTS OF EPITAXIAL SILICON IN REGION 1-3.3 EV [J].

HULTHEN, R .

PHYSICA SCRIPTA, 1975, 12 (06) :342-344

[10]

JARZEBSKI ZM, 1976, J ELECTROCHEM SOC, V123, pC199, DOI [10.1149/1.2133010, 10.1149/1.2132647, 10.1149/1.2133090]

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