OPTICALLY SWITCHED RESONANT-TUNNELING DIODES

被引:35
作者
MOISE, TS [1 ]
KAO, YC [1 ]
GARRETT, LD [1 ]
CAMPBELL, JC [1 ]
机构
[1] UNIV TEXAS,MICROELECTR RES CTR,DEPT ELECTR & COMP ENGN,AUSTIN,TX 78712
关键词
D O I
10.1063/1.113826
中图分类号
O59 [应用物理学];
学科分类号
摘要
The room-temperature photoinduced switching of an InGaAs/AlAs resonant-tunneling diode is demonstrated. When illuminated at an irradiance of greater than 20 W cm-2 using 1.3 μm radiation, the resonant-tunneling diode switches from a high-conductance to a low-conductance electrical state and exhibits a voltage swing of 600 mV. The switching characteristics are reversible and, in the absence of light, the detector returns to its original high conductance operating state. Small-signal optical measurements performed with the device biased prior to resonance demonstrate a 3 dB bandwidth of ∼1.5 GHz.© 1995 American Institute of Physics.
引用
收藏
页码:1104 / 1106
页数:3
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