IN-SITU NONALLOYED OHMIC CONTACTS TO P-GAAS

被引：6
作者：
HONG, M
VAKHSHOORI, D
MANNAERTS, JP
THIEL, FA
WYNN, JD
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1994年 / 12卷 / 02期
关键词：
D O I：
10.1116/1.587083
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Very low resistivity, nonalloyed ohmic contacts to p-GaAs are realized by in situ molecular beam epitaxy (MBE). Heavily Be-doped GaAs either in a uniform doping or with a delta-doping scheme was grown using MBE. Three different metals of Au, Ag, and Nb were in situ deposited on p-GaAs, yielding contact resistance R(C) less than (1-4) x 10(-7) OMEGA cm2.
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页码：1047 / 1049
页数：3
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