HYDROGEN EVOLUTION FROM PLASMA-DEPOSITED AMORPHOUS-SILICON FILMS

被引：42
作者：
BEYER, W
WAGNER, H
机构：
来源：
JOURNAL DE PHYSIQUE | 1981年 / 42卷 / NC4期
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D O I：
10.1051/jphyscol:19814171
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页码：783 / 786
页数：4
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  • [1] HYDROGEN EVOLUTION AND DEFECT CREATION IN AMORPHOUS SI-H ALLOYS
    BIEGELSEN, DK
    STREET, RA
    TSAI, CC
    KNIGHTS, JC
    [J]. PHYSICAL REVIEW B, 1979, 20 (12): : 4839 - 4846
  • [2] QUANTITATIVE-ANALYSIS OF HYDROGEN IN GLOW-DISCHARGE AMORPHOUS SILICON
    BRODSKY, MH
    FRISCH, MA
    ZIEGLER, JF
    LANFORD, WA
    [J]. APPLIED PHYSICS LETTERS, 1977, 30 (11) : 561 - 563
  • [3] STUDIES OF THE MECHANISM OF THE DECOMPOSITION OF HYDROGENATED A-SI FILMS
    JOHN, P
    ODEH, IM
    THOMAS, MJK
    TRICKER, MJ
    RIDDOCH, F
    WILSON, JIB
    [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1980, 42 (05): : 671 - 681
  • [4] HYDROGEN CONTENT, ELECTRICAL-PROPERTIES AND STABILITY OF GLOW-DISCHARGE AMORPHOUS SILICON
    JONES, DI
    GIBSON, RA
    LECOMBER, PG
    SPEAR, WE
    [J]. SOLAR ENERGY MATERIALS, 1979, 2 (01): : 93 - 106
  • [5] KINETIC-ANALYSIS OF HYDROGEN EVOLUTION FROM REACTIVELY SPUTTERED AMORPHOUS SILICON-HYDROGEN ALLOYS
    OGUZ, S
    PAESLER, MA
    [J]. PHYSICAL REVIEW B, 1980, 22 (12): : 6213 - 6221
  • [6] PROTON NMR-STUDIES OF ANNEALED PLASMA-DEPOSITED AMORPHOUS SI-H FILMS
    REIMER, JA
    VAUGHAN, RW
    KNIGHTS, JC
    [J]. SOLID STATE COMMUNICATIONS, 1981, 37 (02) : 161 - 164
  • [7] FORMATION OF PIN HOLES IN HYDROGENATED AMORPHOUS-SILICON AT HIGH-TEMPERATURES AND THE YIELD STRENGTH OF A-SI-H
    SHANKS, HR
    LEY, L
    [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (02) : 811 - 813
  • [8] TSAI CC, 1977, 7TH P INT C AM LIQ S, P339
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