HYDROGEN EVOLUTION FROM PLASMA-DEPOSITED AMORPHOUS-SILICON FILMS

被引：43

作者：

BEYER, W

WAGNER, H

机构：

来源：

JOURNAL DE PHYSIQUE | 1981年 / 42卷 / NC4期

关键词：

D O I：

10.1051/jphyscol:19814171

中图分类号：

学科分类号：

摘要：

引用

页码：783 / 786

页数：4

共 8 条

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[5] KINETIC-ANALYSIS OF HYDROGEN EVOLUTION FROM REACTIVELY SPUTTERED AMORPHOUS SILICON-HYDROGEN ALLOYS [J].

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[6] PROTON NMR-STUDIES OF ANNEALED PLASMA-DEPOSITED AMORPHOUS SI-H FILMS [J].

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[7] FORMATION OF PIN HOLES IN HYDROGENATED AMORPHOUS-SILICON AT HIGH-TEMPERATURES AND THE YIELD STRENGTH OF A-SI-H [J].

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LEY, L .

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[8]

TSAI CC, 1977, 7TH P INT C AM LIQ S, P339

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