PREPARATION OF PB(ZR,TI)O-3 THIN-FILMS ON ELECTRODES INCLUDING IRO2

被引：310

作者：

NAKAMURA, T

NAKAO, Y

KAMISAWA, A

TAKASU, H

机构：

[1] ROHM Co., Ltd., Ukyo-ku, Kyoto 615

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 12期

关键词：

D O I：

10.1063/1.112031

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The development of ferroelectric memory devices requires an improvement of the fatigue properties of ferroelectric thin films. Pb(Zr,Ti)O3(PZT) thin films obtained by the sol-gel method on Pt/Ti electrodes have reduced residual polarization by continuous polarization reverses about of 10(8) cycles. The electric characteristics such as fatigue properties have mostly depended on electrode materials. We propose Ir, IrO2, and these layer films as electrode materials and evaluate electric characteristics of PZT thin film capacitors. PZT thin films using Ir/IrO2 and Pt/IrO2 electrodes show no fatigue up to 10(12) cycles of +/-5 V switching pulses. Moreover, good properties of PZT capacitors, not only on SiO2 but also on polycrystalline silicon, were obtained by using IrO2.

引用

页码：1522 / 1524

页数：3

共 5 条

[1]

Eaton S. S., 1988, 1988 IEEE International Solid-State Circuits Conference. Digest of Technical Papers. 31st ISSCC. First Edition, P130

[2]

Kwok C. K., 1993, Integrated Ferroelectrics, V3, P121, DOI 10.1080/10584589308216706

[3]

MIHARA T, 1992, 4TH P INT S INT FERR, P137

[4]

Ogawa T., 1992, MATER RES SOC S P, V243, P93

[5] PREPARATION OF PB(ZR, TI)O3 FILMS ON PT/TI/TA ELECTRODES BY SOL-GEL PROCESS [J].

SAMESHIMA, K ;

NAKAMURA, T ;

HOSHIBA, K ;

NAKAO, Y ;

KAMISAWA, A ;

ATSUKI, T ;

SOYAMA, N ;

OGI, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (9B) :4144-4146

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