OPTICAL AND ELECTRICAL CHARACTERIZATION OF CHEMICAL DEFECTS IN GAAS-LAYERS GROWN BY MBE

被引：14
作者：
KOSCHEL, WH
SMITH, RS
HIESINGER, P
机构：
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1981年 / 128卷 / 06期
关键词：
D O I：
10.1149/1.2127631
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
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页码：1336 / 1339
页数：4
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