OPTICAL AND ELECTRICAL CHARACTERIZATION OF CHEMICAL DEFECTS IN GAAS-LAYERS GROWN BY MBE

被引：14

作者：

KOSCHEL, WH

SMITH, RS

HIESINGER, P

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1981年 / 128卷 / 06期

关键词：

D O I：

10.1149/1.2127631

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1336 / 1339

页数：4

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