CONDITIONS OF GAAS(100) GALLIUM-STABILIZED SURFACE DURING MOLECULAR-BEAM EPITAXY

被引：0
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作者：
KARPOV, SY
KOVALCHUK, YV
DELAKRUZ, G
MYACHIN, VE
POGORELSKII, YV
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PISMA V ZHURNAL TEKHNICHESKOI FIZIKI | 1991年 / 17卷 / 24期
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O59 [应用物理学];
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页码：94 / 98
页数：5
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