ELECTROCHEMICAL CAPACITANCE-VOLTAGE PROFILING OF N-TYPE MOLECULAR-BEAM EPITAXY ZNSE LAYERS

被引：20
|
作者：
WANG, SY
HARAN, F
SIMPSON, J
STEWART, H
WALLACE, JM
PRIOR, KA
CAVENETT, BC
机构：
[1] Department of Physics, Heriot-Watt University, Edinburgh EH14
来源：
APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 03期
关键词：
D O I：
10.1063/1.107463
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report the use of electrochemical capacitance-voltage profiling of n-type ZnSe layers by the use of NaOH electrolyte. Samples with both uniform and staircase doping profiles have been measured with concentrations ranging over 10(16) -10(19) cm-3. The profiling technique has revealed in some samples regions of lower carrier concentration at the surface and at the ZnSe/GaAs interface. Our results demonstrate that this powerful technique can now be used for assessing the growth parameters of wideband gap II-VI materials in the same way that is widely accepted for III-V semiconductors.
引用
收藏
页码：344 / 346
页数：3
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