CHEMICAL PHYSICS OF FLUORINE PLASMA-ETCHED SILICON SURFACES - STUDY OF SURFACE CONTAMINATIONS

被引：30

作者：

BRAULT, P ^{[1
]}

RANSON, P ^{[1
]}

ESTRADESZWARCKOPF, H ^{[1
]}

ROUSSEAU, B ^{[1
]}

机构：

[1] CNRS,CTR RECH SOLIDES ORG CRISTALLINE IMPARFAITE,F-45071 ORLEANS 02,FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 68卷 / 04期

关键词：

D O I：

10.1063/1.346625

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

F2 plasma-Si(100) surface interaction experiments have been conducted to understand basic mechanisms of surface modifications. Surface analysis has been investigated using x-ray photoelectron spectroscopy and nuclear reaction analysis. The experiments show deep penetration of fluorine into silicon and limitation of etching caused by oxide layers coming from contamination of the plasma by removal of oxygen from alumina walls of the reactor. Biasing of the silicon substrate enhanced carbon contamination.

引用

页码：1702 / 1709

页数：8

共 57 条

[1] THE PLASMA-ETCHING OF POLYSILICON WITH CF3CL/ARGON DISCHARGES .1. PARAMETRIC MODELING AND IMPEDANCE ANALYSIS [J].

ALLEN, KD ;

SAWIN, HH ;

MOCELLA, MT ;

JENKINS, MW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (11) :2315-2325

[2]

BAGUS PS, 1985, MATERIALS RES SOC S, V38, P179

[3]

Boswell R. W., 1970, PHYS LETT A, V33, P475

[4]

BOUCHOULE A, 1985, 5TH P S PLASM PROC, P399

[5] XPS ANALYSIS OF SI AND SIO2 SURFACES EXPOSED TO CHF3 AND CHF3-C2F6 PLASMAS - POLYMERIZATION AND ETCHING [J].

CARDINAUD, C ;

RHOUNNA, A ;

TURBAN, G ;

GROLLEAU, B .

REVUE DE PHYSIQUE APPLIQUEE, 1989, 24 (03) :309-321

[6] CONTAMINATION OF SILICON SURFACES EXPOSED TO CHF3 PLASMAS - AN XPS STUDY OF THE FILM AND THE FILM-SURFACE INTERFACE [J].

CARDINAUD, C ;

RHOUNNA, A ;

TURBAN, G ;

GROLLEAU, B .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (06) :1472-1477

[7] ELECTRON-SPECTROSCOPY STUDY OF SILICON SURFACES EXPOSED TO XEF2 AND THE CHEMISORPTION OF SIF4 ON SILICON [J].

CHUANG, TJ .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) :2614-2619

[8] FORMATION OF SILICON-CARBIDE IN SILICON SUBSTRATES DURING CF4/H2 DRY ETCHING [J].

COYLE, GJ ;

OEHRLEIN, GS .

APPLIED SURFACE SCIENCE, 1986, 25 (04) :423-434

[9] FORMATION OF A SILICON-CARBIDE LAYER DURING CF4/H2 DRY ETCHING OF SI [J].

COYLE, GJ ;

OEHRLEIN, GS .

APPLIED PHYSICS LETTERS, 1985, 47 (06) :604-606

[10] REACTIVE ATOM SURFACE SCATTERING - THE ADSORPTION AND REACTION OF ATOMIC OXYGEN ON THE SI(100) SURFACE [J].

ENGSTROM, JR ;

NELSON, MM ;

ENGEL, T .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (03) :1837-1840

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