MOSSBAUER EFFECT AND LATTICE PARAMETER FOR SILICON DOPED WITH ANTIMOONY

被引：9
作者：
TEAGUE, JR
YAGNIK, CM
LONG, GJ
GERSON, R
LAFLEUR, LD
机构：
来源：
SOLID STATE COMMUNICATIONS | 1971年 / 9卷 / 19期
关键词：
D O I：
10.1016/0038-1098(71)90343-7
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：1695 / &
相关论文
共 8 条
[1]  
BUBLIK VT, 1969, FIZ TVERD TELA+, V10, P2247
[2]   ISOMER SHIFTS OF SB-121 IN III-V SEMICONDUCTORS [J].
DOKUZOGUZ, HZ ;
BOWEN, LH ;
STADELMAIER, HH .
SOLID STATE COMMUNICATIONS, 1970, 8 (04) :259-+
[3]   DENSITOMETRIC AND ELECTRICAL INVESTIGATION OF BORON IN SILICON [J].
HORN, FH .
PHYSICAL REVIEW, 1955, 97 (06) :1521-1525
[4]   RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON [J].
IRVIN, JC .
BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02) :387-+
[5]   ELECTRICAL PROPERTIES OF PURE SILICON AND SILICON ALLOYS CONTAINING BORON AND PHOSPHORUS [J].
PEARSON, GL ;
BARDEEN, J .
PHYSICAL REVIEW, 1949, 75 (05) :865-883
[6]   MOSSBAUER SPECTROSCOPY IN GROUP-III ANTIMONIDES [J].
PRUITT, RA ;
MARSHALL, SW ;
ODONNELL, CM .
PHYSICAL REVIEW B, 1970, 2 (07) :2383-&
[7]  
RHODES E, 1966, NBS494 TECH NOT, P108
[8]  
RUBY SL, 1967, MOSSBAUER EFFECT MET, V3, P203
1