TUNNELING MICROSCOPE OBSERVATION OF A STRUCTURAL SURFACE PHASE-TRANSITION - STRUCTURE, FLUCTUATIONS, AND LOCAL-EFFECTS

被引：34

作者：

HWANG, IS

GOLOVCHENKO, JA

机构：

[1] HARVARD UNIV,DEPT PHYS,CAMBRIDGE,MA 02138

[2] ROWLAND INST SCI INC,CAMBRIDGE,MA 02142

来源：

PHYSICAL REVIEW LETTERS | 1993年 / 71卷 / 02期

关键词：

D O I：

10.1103/PhysRevLett.71.255

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We study a reversible phase transition of one monolayer of Pb on a Ge(111) surface with a tunneling microscope over a temperature range from below to above the transition (approximately 175-degrees-C). The controversial high temperature phase is actually a simple Pb-terminated 1 x 1 structure. Below the transition temperature, Pb atoms are displaced from their T1 positions and form trimers with square-to 3 x square-root 3 periodicity. A fluctuating structure with patches of trimers can be resolved slightly above the transition temperature. The important effects of boundaries and domain size on the phase transformation are discussed

引用

页码：255 / 258

页数：4

共 19 条

[1]

[Anonymous], STRUCTURE DYNAMICS S

[2]

Baxter R. J., 2007, EXACTLY SOLVED MODEL

[3] DIMER-ADATOM-STACKING-FAULT (DAS) AND NON-DAS (111) SEMICONDUCTOR SURFACES - A COMPARISON OF GE(111)-C (2X8) TO SI(111)-(2X2), SI(111)-(5X5), SI(111)-(7X7), AND SI(111)-(9X9) WITH SCANNING TUNNELING MICROSCOPY [J].