THERMALLY STIMULATED CAPACITANCE (TSCAP) IN P-N-JUNCTIONS

被引：110

作者：

SAH, CT

WALKER, JW

CHAN, WW

FU, HS

机构：

来源：

APPLIED PHYSICS LETTERS | 1972年 / 20卷 / 05期

关键词：

D O I：

10.1063/1.1654104

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：193 / &

共 13 条

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BRAUNLICH, P ;

KELLY, P .

PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (04) :1596-+

[2] DETERMINATION OF ELECTRON TRAPPING PARAMETERS [J].

BUBE, RH ;

DUSSEL, GA ;

HO, CT ;

MILLER, LD .

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[3]

BUEHLER MG, TO BE PUBLISHED

[4] CAPACITIVES METHODS OF DETERMINATION OF ENERGY DISTRIBUTION OF ELECTRON TRAPS IN SEMICONDUCTORS [J].

CARBALLES, JC ;

VARON, J ;

CEVA, T .

SOLID STATE COMMUNICATIONS, 1971, 9 (19) :1627-+

[5] RESIDUAL ELECTRICALLY ACTIVE DEFECTS AFTER LATTICE REORDERING IN ION-IMPLANTED SILICON [J].

DAVIES, DE ;

ROOSILD, S .

APPLIED PHYSICS LETTERS, 1971, 18 (12) :548-&

[6] THERMAL RELEASE OF TRAPPED SPACE CHARGE IN SOLIDS [J].

DRIVER, MC ;

WRIGHT, GT .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1963, 81 (519) :141-&

[7] DETERMINATION OF DEEP LEVEL CENTER ENERGY AND CONCENTRATION BY THERMALLY STIMULATED CONDUCTIVITY MEASUREMENTS USING REVERSE-BIASED P-N JUNCTIONS [J].

FORBES, L ;

SAH, CT .

SOLID-STATE ELECTRONICS, 1971, 14 (02) :182-&

[8] EQUATIONS FOR THERMOLUMINESCENCE AND THERMALLY STIMULATED CURRENT AS DERIVED FROM SIMPLE MODELS [J].

LAND, PL .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1969, 30 (07) :1693-&

[9]

RANDALL JT, 1945, PROC R SOC LON SER-A, V184, P366

[10] THERMAL EMISSION RATES OF CARRIERS AT GOLD CENTERS IN SILICON [J].

SAH, CT ;

FORBES, L ;

ROSIER, LI ;

TASCH, AF ;

TOLE, AB .

APPLIED PHYSICS LETTERS, 1969, 15 (05) :145-+

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