INSTABILITY OF IN-GA-AS-P LIQUID SOLUTION DURING LOW-TEMPERATURE LPE OF IN1-XGAXAS1-YPY ON INP

被引:37
作者
TAKAHEI, K
NAGAI, H
机构
关键词
D O I
10.1143/JJAP.20.L313
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:L313 / L316
页数:4
相关论文
共 9 条
[1]  
ARAI S, 1980, IEEE J QUANTUM ELECT, V16, P179
[2]   COMPOSITION DEPENDENCE OF INFLUENCE OF LATTICE MISMATCH ON SURFACE MORPHOLOGY IN LPE GROWTH OF INGAASP ON (100)-INP) [J].
FENG, M ;
TASHIMA, MM ;
WINDHORN, TH ;
STILLMAN, GE .
APPLIED PHYSICS LETTERS, 1978, 33 (06) :533-536
[3]   LIQUID-PHASE EPITAXY OF GA1-YINYASXSB1-X QUATERNARY ALLOYS ON GASB [J].
KANO, H ;
MIYAZAWA, S ;
SUGIYAMA, K .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (11) :2183-2184
[4]  
KAWAGUCHI K, 1979, ELECTRON LETT, V11, P669
[5]   BAND-GAP VERSUS COMPOSITION AND DEMONSTRATION OF VEGARDS LAW FOR IN1-XGAXASYP1-Y LATTICE MATCHED TO INP [J].
NAHORY, RE ;
POLLACK, MA ;
JOHNSTON, WD ;
BARNS, RL .
APPLIED PHYSICS LETTERS, 1978, 33 (07) :659-661
[6]   LIQUID-PHASE EPITAXY OF ALYGA1-YAS1-XSBX AND IMPORTANCE OF STRAIN EFFECTS NEAR MISCIBILITY GAP [J].
NAHORY, RE ;
POLLACK, MA ;
BEEBE, ED ;
DEWINTER, JC ;
ILEGEMS, M .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (07) :1053-1058
[7]   PSEUDO-QUATERNARY PHASE-DIAGRAM OF GA-IN-AS-SB SYSTEM [J].
NAKAJIMA, K ;
OSAMURA, K ;
YASUDA, K ;
MURAKAMI, Y .
JOURNAL OF CRYSTAL GROWTH, 1977, 41 (01) :87-92
[8]   LOW-TEMPERATURE LIQUID-PHASE EPITAXY GROWTH FOR ROOM-TEMPERATURE CW OPERATION OF 1.55-MU-M INGAASP-INP DOUBLE-HETEROSTRUCTURE LASER [J].
TAKAHEI, K ;
HAGAI, H ;
KAWAGUCHI, H .
APPLIED PHYSICS LETTERS, 1980, 36 (04) :309-310
[9]  
TAKAHEI K, UNPUBLISHED