BORON-DIFFUSION WITHIN TASI2/POLY-SI GATES

被引：0

作者：

SCHWALKE, U

MAZURE, C

NEPPL, F

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 01期

关键词：

D O I：

10.1116/1.584434

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：120 / 126

页数：7

共 26 条

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