ENTROPY-DRIVEN METASTABILITIES IN DEFECTS IN SEMICONDUCTORS

被引:26
作者
HAMILTON, B [1 ]
PEAKER, AR [1 ]
PANTELIDES, ST [1 ]
机构
[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
关键词
D O I
10.1103/PhysRevLett.61.1627
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:1627 / 1630
页数:4
相关论文
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