AL2O3-SILICON INSULATED GATE FIELD EFFECT TRANSISTORS

被引：60

作者：

WAXMAN, A

ZAININGER, KH

机构：

来源：

APPLIED PHYSICS LETTERS | 1968年 / 12卷 / 03期

关键词：

D O I：

10.1063/1.1651895

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：109 / +

页数：1

共 14 条

[1] AN INVESTIGATION OF INSTABILITY AND CHARGE MOTION IN METAL-SILICON OXIDE-SILICON STRUCTURES [J].

HOFSTEIN, SR .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (02) :222-+

[2] STABILIZATION OF MOS DEVICES [J].

HOFSTEIN, SR .

SOLID-STATE ELECTRONICS, 1967, 10 (07) :657-+

[3] SILICON INSULATED-GATE FIELD-EFFECT TRANSISTOR [J].

HOFSTEIN, SR ;

HEIMAN, FP .

PROCEEDINGS OF THE IEEE, 1963, 51 (09) :1190-&

[4] STABILIZATION OF SIO2 PASSIVATION LAYERS WITH P2O5 [J].

KERR, DR ;

LOGAN, JS ;

BURKHARDT, PJ ;

PLISKIN, WA .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (04) :376-&

[5] THE FORMATION OF METAL OXIDE FILMS USING GASEOUS AND SOLID ELECTROLYTES [J].

MILES, JL ;

SMITH, PH .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (12) :1240-1245

[6] SI-SIO2 INTERFACE - ELECTRICAL PROPERTIES AS DETERMINED BY METAL-INSULATOR-SILICON CONDUCTANCE TECHNIQUE [J].

NICOLLIA.EH ;

GOETZBER.A .

BELL SYSTEM TECHNICAL JOURNAL, 1967, 46 (06) :1055-+

[7]

NIGH HE, 1967, SEALED GATE IGFET

[8] EFFECTS OF IONIZING RADIATION ON OXIDIZED SILICON SURFACES AND PLANAR DEVICES [J].

SNOW, EH ;

GROVE, AS ;

FITZGERALD, DJ .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (07) :1168-+

[9] EFFECTS OF ELECTRON IRRADIATION OF METAL-NITRIDE-SEMICONDUCTOR INSULATED GATE FIELD-EFFECT TRANSISTORS [J].

STANLEY, AG ;

WEGENER, HAR .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (05) :784-&

[10] A NEW INSULATED-GATE SILICON TRANSISTOR [J].

TOMBS, NC ;

WEGENER, HAR ;

NEWMAN, R ;

KENNEY, BT ;

COPPOLA, AJ .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (01) :87-+

← 1 2 →