Current-Voltage Characterization of Silicon Quantum Dot Solar Cells

被引：0
|
作者：
Kim, Dong-Ho [1 ]
机构：
[1] KIMS, Funct Coatings Res Grp, Chang Won 641831, South Korea
来源：
TRANSACTIONS ON ELECTRICAL AND ELECTRONIC MATERIALS | 2009年 / 10卷 / 04期
关键词：
Silicon quantum dot; Solar cell; Photocurrent; Conduction mechanism;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The electrical and photovoltaic properties of single junction silicon quantum dot solar cells are investigated. A prototype solar cell with an effective area of 4.7 mm(2) showed an open circuit voltage of 394 mV and short circuit current density of 0.062 mA/cm(2). A diode model with series and shunt resistances has been applied to characterize the dark current-voltage data. The photocurrent of the quantum-dot solar cell was found to be strongly dependent on the applied voltage bias, which can be understood by consideration of the conduction mechanism of the activated carriers in the quantum dot imbedded material.
引用
收藏
页码：143 / 145
页数：3
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