STEADY-STATE PHOTOCARRIER GRATING TECHNIQUE FOR DIFFUSION LENGTH MEASUREMENT IN PHOTOCONDUCTIVE INSULATORS

被引：156

作者：

RITTER, D ^{[1
]}

ZELDOV, E ^{[1
]}

WEISER, K ^{[1
]}

机构：

[1] TECHNION ISRAEL INST TECHNOL,DEPT ELECT ENGN,IL-32000 HAIFA,ISRAEL

来源：

APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 13期

关键词：

D O I：

10.1063/1.97548

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：791 / 793

页数：3

共 11 条

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[2]

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[5] COLLECTION LENGTH OF HOLES IN A-SI-H BY SURFACE PHOTO-VOLTAGE USING A LIQUID SCHOTTKY-BARRIER [J].

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APPLIED PHYSICS LETTERS, 1982, 40 (05) :403-405

[6] PHOTOELECTROMAGNETIC EFFECT IN AMORPHOUS-SILICON [J].

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APPLIED PHYSICS LETTERS, 1980, 37 (03) :327-330

[7]

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[8]

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[9]

Rose A, 1963, CONCEPTS PHOTOCONDUC

[10] DIFFERENTIAL SURFACE PHOTOVOLTAGE MEASUREMENT OF MINORITY-CARRIER DIFFUSION LENGTH IN THIN-FILMS [J].

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APPLIED PHYSICS LETTERS, 1985, 47 (07) :740-742

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